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smj-te
产品详情

igbt缓冲吸收电容: smj-te系列

产品特点:

1:迈拉胶带封装,阻燃树脂灌注;

2:镀锡铜线轴向引出;

3:耐压高,损耗(tgδ)小,温升低;

4:自感(esl)小,等效串联电阻(esr)小;

5:高脉冲电流,高dv/dt承受能力。

introduction:

1: mylar tape, sealed with resin;
2: axial leads with tinned copper wire;

3: resistance to high voltage, low tgδ,low temperaturerise;

4: low esl and esr;

5: high pulse current.


应用:

1:igbt 缓冲吸收。

2:广泛应用于电力电子设备中开关器件关断时的尖峰电压,尖峰电流吸收保护。

application

1: igbt snubber.

2: widely used in power electronic equipmentwhen the peak voltage, peak current absorption protection.


性能参数/technical data


工作温度范围/operating temperature range

max operating temperature:   85℃

upper category temperature: 85℃

lower category temperature: -40℃

容量范围/capacitance range

0.1μf~5.6μf

额定电压/ rated voltage

630v.dc~2000v.dc

容量偏差/cap.tol

±5%(j) ;±10%(k)

耐电压/withstand voltage

1.5un dc/10s

损耗角正切/dissipation factor

tgδ≤0.0005  c≤1μf f=10khz

tgδ≤0.001  c≥1μf f=10khz

绝缘电阻/insulation resistance

c≤0.33μf rs≥15000 mω  (at20℃ 100v.dc 60s)

c>0.33μf  rs*c≥5000s(at20℃ 100v.dc 60s)

耐脉冲电流冲击/withstand strike current

200v/μs~1500v/μs

预期寿命/life expectancy

100000h(un;θhotspot≤85°c)

引用标准/reference standard

iec61071;iec 61881


外形图: